May 13 2008
STMicroelectronics, a world leader in power semiconductors, has introduced IGBTs that use innovative and efficient lifetime-control techniques to reduce energy loss during turn off. New devices, including the STGxL6NC60D 600V PowerMESH(TM) IGBT, allow designers to use robust, low-cost IGBT technology in energy-sensitive circuits such as lighting ballasts operating well above 20kHz, achieving greater overall efficiency than standard-technology MOSFETs.
The improvements in switching performance also allow designers to use IGBTs highly competitive designs with hard-switching topologies as well as with resonant circuits. In addition, the lower turn-off energy allows the device to operate at low junction temperature with a small snubber capacitor, leading to greater benefits including reduced power dissipation, greater reliability and a smaller footprint.
Compared to conventional MOSFETs, ST's new IGBT technology delivers significantly better performance per die area, to enable a reduced-cost solution. As a further benefit, a co-packaged ultra-fast soft-recovery diode ensures high dV/dt immunity not achievable with other power devices. Applications for this new range of hyper-fast IGBTs include high-frequency lighting ballasts from 70W to 150W, as well as switched-mode power supplies, power-factor controllers and other high-frequency power-switching applications.
The four devices that make up the STGxL6NC60D series provide a choice of power packages, with TO-220, TO-220FP, DPAK and D2PAK options. Prices start at $0.35 for the STGPL6NC60D in the TO-220 package, for orders over five million pieces.