The New SPV1001 from STMicroelectronics Prevents Hotspot Power Loss

STMicroelectronics, a company known for its power semiconductor products, has declared the introduction of SPV1001 which can help in the generation of more power from each cell of the module. The new introduction substitutes the currently used bypass diode with a smarter instrument to improve the efficiency without making any changes in the system package. The new device is aimed at allowing quicker return on investment with increased power output to the users.

The new SPV1001 incorporates a low-loss power switch and an accuracy controller. It is used in place of the bypass diodes currently utilized in solar modules to thwart the hotspot effects and saves diodes from loosing energy. The integrated power switch utilized in the SPV1001 allows lesser level of leakage in current during power production action of the PV module. To bring down such a change the company utilized special processes in its BCD6 chip fabrication, utilizing efficient power elements in combination with a logic control circuitry. The SPV1001 is also offered as MLPD package that can be easily laminated along the panel which in turn simplifies the system design and increases the system performance.

The other features of SPV1001 include low level transmission loss when functioning in the bypass mode. It can be used for processes such as EHD5 power MOSFET and BCD6. Its low level leakage in current feature reduces current losses when the system is kept in stand-by-mode. The use of lower temperature improves the design of the junction box. The product is designed to manage high power surges as well as current generated from lightening effects. SPV1001 enables easy incorporation of the power and control operations.

Source: http://www.st.com/