Jan 24 2011
Renesas Electronics has introduced the new high-voltage N-channel power metal-oxide-semiconductor field-effect-transistor (MOSFET), the RJK60S5DPK, to be used in high efficiency power supply units.
The RJK60S5DPK power MOSFET offers low power consumption for communication base stations, solar power generating systems and for PC servers. It is also perfect for power supply units’ primary power switching circuits, which transform from Alternating Current (AC) to Direct Current (DC). It employs a high precision super junction structure for achieving a Figure of Merit (FOM) and a 90% improved overall performance index for a power MOSFET device.
Currently there is a huge demand for efficient power supply circuits, which would reduce consumption of energy and are used in devices such as flat-panel TVs, PC servers and Communication Base Stations. This has led to a greater demand for power MOSFETs with lower on-resistance. But the improvements using a conventional planar structure were very limited, hence Renesas used its expertise in power device technology for developing the RJK60S5DPK power MOSFET, which uses a deep-groove formation process.
The new RJK60S5DPK power MOSFET attains a 52% lower on-resistance of 150 milliohm when compared to the other Renesas MOSFETs. It has a 6 nC drive capacitance, which leads to an 80% lower switching speeds than the other existing electronic products developed by Renesas. So by making use of high speed switching, power conversion efficiency could be boosted. The RJK60S5DPK power MOSFET could be easily mounted on switching power supply circuit boards. Renesas plans on utilizing the new RJK60S5DPK power MOSFET and create a range of new products suited for specific applications.
Source: http://www.renesas.com